And it should also be noted that the TDDB properties and lifetime of refractory metal gate capacitors with thinner EOT are better than those of polysilicon gate capacitors.

• 进一步研究发现具有更薄EOT的难熔金属栅电极PMOS电容在TDDB特性以及寿命等方面均优于多晶硅栅电极的相应结构.