After analysis the structure of normal MOS, VDMOS(Vertical Double diffused MOS),VVMOS(Vertical V-groove MOS) and UMOS, we found the benefit of the trench MOS.

• 本文通过与传统平面型、V形、U形等功率MOS器件结构的对比，分析了深沟槽型功率MOS器件的独特优点。