Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI.

• 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。