A polysilicon film has been successfully deposited on a quartz substrate with thereaction of SiH_4 decomposition induced by a CW CO_2 laser. Its Raman shift indicatesthat the crystallite size increases when the inducing reaction lasts.

• 用CWCO_2激光诱发SiH_4反应；在石英基片上淀积多晶硅膜；它的Raman谱表明；激光诱发反应时间越长；结晶度越高.