A passive UHF RFID system was described in chapter 4.Some frond-end circuits of the reader terminal will be tried to realize by using 0.18 m 1P6M CMOS process.

• 中文摘要本论文以矽半导体制程，所制作之高频金氧半电晶体为主轴，藉由与矽晶圆厂之计画合作案，来了解次微米元件特性，并学习设计射频电路。