A novel technique,the multi layered media technology,has been successfully developed to fabricate T shaped gate of pseudomorphic high electron mobility transistor(PHEMT)by X ray lithography.

• 半导体器件日益向高频、高速方向发展,赝质结高电子迁移率晶体管以其高频、高速、低噪声受到人们重视而发展迅速。