A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.

• 研制成功了可商业化的 75mm单片超高真空化学气相淀积锗硅外延设备SGE50 0 ；并生长了器件级SiGeHBT材料 .